An SRAM SEU Cross Section Curve Physics Model

Static random access memories (SRAMs) are prone to a single-event upset (SEU), also known as soft errors, due transient noise caused by single strike of radiation. Beam testing has been extensively used measure the SEU cross section SRAMs function linear energy transfer (LET) charged particle The evolution LET is called curve, which plays vital role in rate analysis for hardness assurance. Various analytical models have developed describe SRAM curves, and they proven be useful reducing cost beam well revealing physics behind test results. However, involve arbitrary parameters, make it challenging predict curves without any Moreover, current method analyzing or dependence sections relies on model different from that power-supply-voltage dependence, becoming increasingly important because demand low-power operation. To overcome these problems, this article proposes unified equation describes both sections. It comprises only parameters physically clear familiar researchers. As giving possible constraints, comparisons with data literature suggest can applied fabricated bulk silicon-on-insulator (SOI) processes across generations early 1000-nm-scale 10-nm-scale technology nodes.